CY7C1520KV18-250BZCT

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CY7C1520KV18-250BZCT is a 72-Mbit (2M × 36) synchronous pipelined DDR-II SRAM with two-word burst operation. It supports up to 250 MHz clocking (DDR transfers at 500 MHz) and selectable read latency: 1.5 cycles with PLL enabled (DOFF HIGH) or 1 cycle DDR-I mode with DOFF LOW. HSTL I/Os support 1.5 V/1.8 V VDDQ, with echo clocks (CQ/CQ), ZQ impedance match, and JTAG 1149.1 test access.

Key Specifications

Complete manufacturer part numberCY7C1520KV18-250BZCT
ManufacturerInfineon Technologies
DescriptionCY7C1520KV18-250BZCT is a 72-Mbit (2M × 36) synchronous pipelined DDR-II SRAM with two-word burst operation. It supports up to 250 MHz clocking (DDR transfers at 500 MHz) and selectable read latency: 1.5 cycles with PLL enabled (DOFF HIGH) or 1 cycle DDR-I mode with DOFF LOW. HSTL I/Os support 1.5 V/1.8 V VDDQ, with echo clocks (CQ/CQ), ZQ impedance match, and JTAG 1149.1 test access.
Package / caseP-BGA-165-801
Product categoryMemory ICs
Pins165
Operating Temperature minimum (manufacturer family record)0 °C
Operating Temperature maximum (manufacturer family record)70 °C
In stock7,630 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: CY7C1520KV18-250BZCT
Manufacturer: Infineon Technologies
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