CY7C2665KV18-550BZXI
The CY7C2665KV18-550BZXI is a 144-Mbit QDR II+ synchronous pipelined SRAM organized as 4M × 36 with four-word burst (4 × 36) transfers in two clock cycles. It supports separate read and write ports with DDR interfaces on both ports (data at 1100 MHz) using a 550 MHz clock, with 2.5-cycle read latency (DOFF high) or 1-cycle QDR I mode (DOFF low). 1.8 V core with VDDQ 1.4 V to VDD, ODT and PLL, in 165-ball Pb-free FBGA, industrial range.
Key Specifications
| Complete manufacturer part number | CY7C2665KV18-550BZXI |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CY7C2665KV18-550BZXI is a 144-Mbit QDR II+ synchronous pipelined SRAM organized as 4M × 36 with four-word burst (4 × 36) transfers in two clock cycles. It supports separate read and write ports with DDR interfaces on both ports (data at 1100 MHz) using a 550 MHz clock, with 2.5-cycle read latency (DOFF high) or 1-cycle QDR I mode (DOFF low). 1.8 V core with VDDQ 1.4 V to VDD, ODT and PLL, in 165-ball Pb-free FBGA, industrial range. |
| Package / case | PG-BGA-165-805 |
| Product category | Memory ICs |
| Pins | 165 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 2,584 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.