CY7S1049GE30-10VXIT
CY7S1049GE30-10VXIT is a 4-Mbit (512K × 8) asynchronous SRAM with embedded ECC and an ERR pin for single-bit error detect/correct indication. It supports 10 ns access (tAA) at 2.2 V to 3.6 V, operates from -40°C to +85°C, and offers CMOS standby ISB2 up to 8 mA. Deep-Sleep disables normal operation for data retention with IDS up to 15 µA. The -VXIT option is a 36-pin SOJ, tape-and-reel.
Key Specifications
| Complete manufacturer part number | CY7S1049GE30-10VXIT |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY7S1049GE30-10VXIT is a 4-Mbit (512K × 8) asynchronous SRAM with embedded ECC and an ERR pin for single-bit error detect/correct indication. It supports 10 ns access (tAA) at 2.2 V to 3.6 V, operates from -40°C to +85°C, and offers CMOS standby ISB2 up to 8 mA. Deep-Sleep disables normal operation for data retention with IDS up to 15 µA. The -VXIT option is a 36-pin SOJ, tape-and-reel. |
| Package / case | PG-SOJ-36-800 |
| Product category | Memory ICs |
| Pins | 36 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 7,707 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.