FM22LD16-55-BG
The FM22LD16-55-BG is a 4-Mbit (256K × 16) nonvolatile ferroelectric RAM (F-RAM) with 55 ns access time, designed as a drop-in replacement for SRAM. It supports up to 100 trillion read/write cycles and 151-year data retention at 65°C, operates from 2.7 V to 3.6 V across -40°C to +85°C. Features include NoDelay™ writes, page mode operation, software block write-protect, and low power consumption. The 48-ball FBGA package is ideal for industrial applications.
Key Specifications
| Complete manufacturer part number | FM22LD16-55-BG |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The FM22LD16-55-BG is a 4-Mbit (256K × 16) nonvolatile ferroelectric RAM (F-RAM) with 55 ns access time, designed as a drop-in replacement for SRAM. It supports up to 100 trillion read/write cycles and 151-year data retention at 65°C, operates from 2.7 V to 3.6 V across -40°C to +85°C. Features include NoDelay™ writes, page mode operation, software block write-protect, and low power consumption. The 48-ball FBGA package is ideal for industrial applications. |
| Package / case | PG-TFBGA-48-806 |
| Product category | Semiconductor |
| Density (manufacturer family record) | 4 MBit |
| Peak Reflow Temp (manufacturer family record) | 260 °C |
| Speed (manufacturer family record) | 55 ns |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.