FM22LD16-55-BGTR
The FM22LD16-55-BGTR is a 4-Mbit (256K × 16) parallel ferroelectric RAM (F-RAM) with 55 ns access time, providing pipeline-compatible, nonvolatile drop-in replacement for asynchronous SRAM. Operating from 2.7 V to 3.6 V over –40°C to +85°C, it features 100 trillion read/write endurance and 151-year data retention at 65°C. Advanced features include software-programmable block write protection, NoDelay™ fast writes, page mode operation, and low power consumption.
Key Specifications
| Complete manufacturer part number | FM22LD16-55-BGTR |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The FM22LD16-55-BGTR is a 4-Mbit (256K × 16) parallel ferroelectric RAM (F-RAM) with 55 ns access time, providing pipeline-compatible, nonvolatile drop-in replacement for asynchronous SRAM. Operating from 2.7 V to 3.6 V over –40°C to +85°C, it features 100 trillion read/write endurance and 151-year data retention at 65°C. Advanced features include software-programmable block write protection, NoDelay™ fast writes, page mode operation, and low power consumption. |
| Package / case | PG-TFBGA-48-806 |
| Product category | Memory ICs |
| Pins | 48 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 11,941 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.