GS0650302LTRXUMA1
The GS-065-030-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-030-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in high power server and data center power supplies and industrial use power applications.
Key Specifications
| Complete manufacturer part number | GS0650302LTRXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The GS-065-030-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-030-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in high power server and data center power supplies and industrial use power applications. |
| Package / case | PG-VSON-8-981 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 6.7 nC |
| RDS (on) [typ] (manufacturer family record) | 50 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.