GS61008PTRXUMA1
The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.
Key Specifications
| Complete manufacturer part number | GS61008PTRXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers. |
| Package / case | PG-ULGA-5-980 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 8 nC |
| RDS (on) [typ] (manufacturer family record) | 7 mΩ |
| VDS maximum (manufacturer family record) | 100 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.