GS66516BTRXUMA1
The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.
Key Specifications
| Complete manufacturer part number | GS66516BTRXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies. |
| Package / case | PG-ULGA-6-981 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 14 nC |
| RDS (on) [typ] (manufacturer family record) | 25 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.