IAUCN08S7L110ATMA1
Infineon introduces another MOSFET utilizing its next, leading edge, power technology; OptiMOS™ 7 80 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm<sup>2</sup> SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
Key Specifications
| Complete manufacturer part number | IAUCN08S7L110ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Infineon introduces another MOSFET utilizing its next, leading edge, power technology; OptiMOS™ 7 80 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm<sup>2</sup> SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. |
| Package / case | PG-TDSON-8-33 |
| Product category | MOSFETs |
| Polarity (manufacturer record) | N |
| QG [typ @10V] (manufacturer family record) | 14.8 nC |
| VGS(th) (manufacturer family record) | 1.6 V |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| VGS(th) minimum (manufacturer family record) | 1.2 V |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| QG maximum [typ @10V] (manufacturer family record) | 19.3 nC |
| RDS (on) maximum [@10V] (manufacturer family record) | 11 mΩ |
| VDS maximum (manufacturer family record) | 80 V |
| VGS(th) maximum (manufacturer family record) | 2 V |
| In stock | 5,443 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.