IDW12G65C5XKSA1

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CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q <sub>c</sub> x V <sub>f)</sub>. <br /> <br />The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Key Specifications

Complete manufacturer part numberIDW12G65C5XKSA1
ManufacturerInfineon Technologies
DescriptionCoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q <sub>c</sub> x V <sub>f)</sub>. <br /> <br />The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Package / casePG-TO247-3-41
Product categorySemiconductor
Pins3
CT (manufacturer family record)360 pF
IR (manufacturer family record)0.6 µA
QC (manufacturer family record)18 nC
RthJC (manufacturer family record)1.5 K/W
VF (manufacturer family record)1.5 V
Voltage Class (manufacturer family record)650 V
V (manufacturer family record)650 V
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Lead timeTo be confirmed

Technical documentation and image source

The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IDW12G65C5XKSA1
Manufacturer: Infineon Technologies
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