IDW15G120C5BFKSA1
The CoolSiC™ Schottky diode generation 5 1200 V, 15 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Key Specifications
| Complete manufacturer part number | IDW15G120C5BFKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ Schottky diode generation 5 1200 V, 15 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. |
| Package / case | PG-TO247-3-41 |
| Product category | Diodes and rectifiers |
| Pins | 3 |
| Pin Count (manufacturer family record) | 3 Pins |
| RthJC (manufacturer family record) | 0.6 K/W |
| Voltage Class (manufacturer family record) | 1200 V |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| In stock | 4,109 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.