IDWD10G120C5XKSA1
CoolSiC™ Schottky diode 1200 V, 10 A G5 in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be increased, by 40% or more.
Key Specifications
| Complete manufacturer part number | IDWD10G120C5XKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CoolSiC™ Schottky diode 1200 V, 10 A G5 in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be increased, by 40% or more. |
| Package / case | PG-TO247-2-1 |
| Product category | Semiconductor |
| Pins | 2 |
| CT (manufacturer family record) | 667 pF |
| IR (manufacturer family record) | 6 A |
| Pin Count (manufacturer family record) | 2 Pins |
| QC (manufacturer family record) | 57 nC |
| RthJC (manufacturer family record) | 0.68 K/W |
| VF (manufacturer family record) | 1.4 V |
| Voltage Class (manufacturer family record) | 1200 V |
| V (manufacturer family record) | 1200 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.