IDWD30G120C5XKSA1
CoolSiC™ Schottky diode 1200 V, 30 A G5 in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be increased, by 40% or more.
Key Specifications
| Complete manufacturer part number | IDWD30G120C5XKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CoolSiC™ Schottky diode 1200 V, 30 A G5 in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be increased, by 40% or more. |
| Package / case | PG-TO247-2-1 |
| Product category | Diodes and rectifiers |
| Pins | 2 |
| Pin Count (manufacturer family record) | 2 Pins |
| RthJC (manufacturer family record) | 0.33 K/W |
| Voltage Class (manufacturer family record) | 1200 V |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| In stock | 7,331 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.