IGC016K10S2XTMA1
The IGC016K10S2 is a 100 V normally-off e-mode GaN power transistor in a small 3 x 5 mm package with integrated Schottky diode. With this integrated feature, reverse conduction losses are minimized and even higher system efficiencies can be reached.
Key Specifications
| Complete manufacturer part number | IGC016K10S2XTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The IGC016K10S2 is a 100 V normally-off e-mode GaN power transistor in a small 3 x 5 mm package with integrated Schottky diode. With this integrated feature, reverse conduction losses are minimized and even higher system efficiencies can be reached. |
| Package / case | PG-TSON-6-3 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 16 nC |
| RDS (on) [typ] (manufacturer family record) | 1.3 mΩ |
| VDS maximum (manufacturer family record) | 100 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.