IGI60L2727B1MXUMA1
IGI60L2727B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 270 mΩ (R<sub>DS(on)</sub> typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.
Key Specifications
| Complete manufacturer part number | IGI60L2727B1MXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | IGI60L2727B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 270 mΩ (R<sub>DS(on)</sub> typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package. |
| Package / case | PG-TFLGA-27-3 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 1.2 nC |
| RDS (on) [typ] (manufacturer family record) | 270 mΩ |
| VDS maximum (manufacturer family record) | 600 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.