IGI60L5050A1MXUMA1
The IGI60L5050A1M combines a half-bridge power stage consisting of two GaN HEMTs with level shifters in a small 6 x 8 mm PG-TFLGA-27-2 package. The device uses the Infineon CoolGaN™ GIT which offers the highest Figure-of-Merit (FOM) and robustness. The internal bootstrap diode means that with minimal external components, designers can achieve full control to tune the rise/fall times while maintaining a simple system BOM. This is ideally suited to support the design of compact appliances in the low power applications.
Key Specifications
| Complete manufacturer part number | IGI60L5050A1MXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The IGI60L5050A1M combines a half-bridge power stage consisting of two GaN HEMTs with level shifters in a small 6 x 8 mm PG-TFLGA-27-2 package. The device uses the Infineon CoolGaN™ GIT which offers the highest Figure-of-Merit (FOM) and robustness. The internal bootstrap diode means that with minimal external components, designers can achieve full control to tune the rise/fall times while maintaining a simple system BOM. This is ideally suited to support the design of compact appliances in the low power applications. |
| Package / case | PG-TFLGA-27-2 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 0.58 nC |
| RDS (on) [typ] (manufacturer family record) | 500 mΩ |
| VDS maximum (manufacturer family record) | 600 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.