IGI65D1414A3MSXUMA1
IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(R<sub>DS(on) typ.</sub>) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package.This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors.
Key Specifications
| Complete manufacturer part number | IGI65D1414A3MSXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | IGI65D1414A3MS combines a half-bridge power stage consisting of two 140 mΩ(R<sub>DS(on) typ.</sub>) / 650 V enhancement mode CoolGaN™ Transistors in a small 6x8 mm QFN-32 package.This product is ideally suited to enable high-power density designs of AC-DC chargers and adapters, low-power motor drives and lighting applications, utilizing the superior switching behavior of CoolGaN™ Transistors. |
| Package / case | PG-TIQFN-32-1 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 1.8 nC |
| RDS (on) [typ] (manufacturer family record) | 140 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.