IGLD65R110D2AUMA1
The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
Key Specifications
| Complete manufacturer part number | IGLD65R110D2AUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications. |
| Package / case | PG-LSON-8-2 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 2.4 nC |
| RDS (on) [typ] (manufacturer family record) | 110 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.