IGLT65R110D2ATMA1
The IGLT65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
Key Specifications
| Complete manufacturer part number | IGLT65R110D2ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The IGLT65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications. |
| Package / case | PG-HDSOP-16-8 |
| Product category | Transistors |
| Pins | 16 |
| QG (manufacturer family record) | 2.4 nC |
| RDS (on) [typ] (manufacturer family record) | 110 mΩ |
| RDS (on) maximum (manufacturer family record) | 140 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | 6,560 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.