IGT60R190D1ATMA1
The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.
Key Specifications
| Complete manufacturer part number | IGT60R190D1ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications. |
| Package / case | PG-HSOF-8-3 |
| Product category | Semiconductor |
| QG (manufacturer family record) | 3.2 nC |
| RDS (on) [typ] (manufacturer family record) | 140 mΩ |
| VDS maximum (manufacturer family record) | 600 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.