IGT65R045D2ATMA1

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The IGT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.

Key Specifications

Complete manufacturer part numberIGT65R045D2ATMA1
ManufacturerInfineon Technologies
DescriptionThe IGT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
Package / casePG-HSOF-8-12
Product categorySemiconductor
QG (manufacturer family record)6 nC
RDS (on) [typ] (manufacturer family record)45 mΩ
VDS maximum (manufacturer family record)650 V
In stockContact for availability
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Lead timeTo be confirmed

Technical documentation and image source

The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IGT65R045D2ATMA1
Manufacturer: Infineon Technologies
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