IGT65R055D2ATMA1
The IGT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
Key Specifications
| Complete manufacturer part number | IGT65R055D2ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The IGT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications. |
| Package / case | PG-HSOF-8-12 |
| Product category | Transistors |
| Pins | 8 |
| QG (manufacturer family record) | 4.7 nC |
| RDS (on) [typ] (manufacturer family record) | 55 mΩ |
| RDS (on) maximum (manufacturer family record) | 66 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | 12,414 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.