IHW50N65R6XKSA1
Reverse Conducting R6 650 V, 50 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.
Key Specifications
| Complete manufacturer part number | IHW50N65R6XKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Reverse Conducting R6 650 V, 50 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies. |
| Package / case | PG-TO247-3-44 |
| Product category | IGBTs |
| Pins | 3 |
| RG (manufacturer family record) | 10 Ω |
| Voltage Class maximum (manufacturer family record) | 650 V |
| In stock | 9,585 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.