IMDQ65R010M2HXUMA1
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
Key Specifications
| Complete manufacturer part number | IMDQ65R010M2HXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density. |
| Package / case | PG-HDSOP-22-1 |
| Product category | MOSFETs |
| Pins | 22 |
| Polarity (manufacturer record) | N |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 10 mΩ |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| RDS (on) maximum [@ Tj = 25°C] (manufacturer family record) | 13 mΩ |
| RthJC maximum (manufacturer family record) | 0.23 K/W |
| VDS maximum (manufacturer family record) | 650 V |
| Voltage Class maximum (manufacturer family record) | 650 V |
| In stock | 11,541 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.