IMDQ75B050M2HXTMA1

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Built on rugged CoolSiC™ G2 technology, the IMDQ75B050M2H integrates two SiC power  switches in a dual‑die common‑drain architecture within a top‑side‑cooled  Q‑DPAK package, simplifying system design and enabling  next‑generation topologies. Designed for modern power grids and  energy systems, it delivers high reliability, efficiency, and low lifetime TCO.

Key Specifications

Complete manufacturer part numberIMDQ75B050M2HXTMA1
ManufacturerInfineon Technologies
DescriptionBuilt on rugged CoolSiC™ G2 technology, the IMDQ75B050M2H integrates two SiC power  switches in a dual‑die common‑drain architecture within a top‑side‑cooled  Q‑DPAK package, simplifying system design and enabling  next‑generation topologies. Designed for modern power grids and  energy systems, it delivers high reliability, efficiency, and low lifetime TCO.
Package / casePG-HDSOP-22-6
Product categorySemiconductor
RDS (on) [@ Tj = 25°C] (manufacturer family record)50 mΩ
VDS maximum (manufacturer family record)750 V
In stockContact for availability
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IMDQ75B050M2HXTMA1
Manufacturer: Infineon Technologies
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