IMDQ75B066M2HXTMA1
Built on the rugged CoolSiC™ G2 technology, the IMDQ75B066M2H integrates two SiC power switches in a dual‑die common‑drain architecture within a top‑side‑cooled Q‑DPAK package, simplifying system design and enabling next‑generation topologies. Designed for modern power grids and energy systems, it delivers high reliability, efficiency, and low lifetime TCO.
Key Specifications
| Complete manufacturer part number | IMDQ75B066M2HXTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Built on the rugged CoolSiC™ G2 technology, the IMDQ75B066M2H integrates two SiC power switches in a dual‑die common‑drain architecture within a top‑side‑cooled Q‑DPAK package, simplifying system design and enabling next‑generation topologies. Designed for modern power grids and energy systems, it delivers high reliability, efficiency, and low lifetime TCO. |
| Package / case | PG-HDSOP-22-7 |
| Product category | MOSFETs |
| Pins | 22 |
| Polarity (manufacturer record) | N |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 66 mΩ |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| RDS (on) maximum [@ Tj = 25°C] (manufacturer family record) | 82.5 mΩ |
| VDS maximum (manufacturer family record) | 750 V |
| Voltage Class maximum (manufacturer family record) | 750 V |
| In stock | 11,395 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.