IMSQ120R053M2HBXUMA1

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CoolSiC™ 1200 V boost stage combining a 52.6 mOhm CoolSiC™ MOSFET and 20 A Schottky diode in a top-side cooled Q-DPAK package with dual die-pad configuration. Designed for industrial power conversion, it offers simplified assembly, excellent thermal performance, and high power density. The optimized layout enables improved efficiency, superior thermal management, and reduced system cost.

Key Specifications

Complete manufacturer part numberIMSQ120R053M2HBXUMA1
ManufacturerInfineon Technologies
DescriptionCoolSiC™ 1200 V boost stage combining a 52.6 mOhm CoolSiC™ MOSFET and 20 A Schottky diode in a top-side cooled Q-DPAK package with dual die-pad configuration. Designed for industrial power conversion, it offers simplified assembly, excellent thermal performance, and high power density. The optimized layout enables improved efficiency, superior thermal management, and reduced system cost.
Package / casePG-HDSOP-16-221
Product categoryMOSFETs
Pins16
Pin Count (manufacturer family record)16 Pins
Qgd (manufacturer family record)6.9 nC
QG (manufacturer family record)28 nC
RDS (on) [@ Tj = 25°C] (manufacturer family record)52.6 mΩ
Operating Temperature minimum (manufacturer family record)-55 °C
Operating Temperature maximum (manufacturer family record)175 °C
RthJA maximum (manufacturer family record)62 K/W
RthJC maximum (manufacturer family record)0.64 K/W
VDS maximum (manufacturer family record)1200 V
Voltage Class maximum (manufacturer family record)1200 V
In stock6,110 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IMSQ120R053M2HBXUMA1
Manufacturer: Infineon Technologies
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