IMSQ120R234M2HHXUMA1

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CoolSiC™ MOSFET discrete 1200 V, 234 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package, optimized for industrial applications such as EV charging, string inverters, and power supplies. The Q-DPAK enables lower system cost through simplified assembly and excellent thermal performance. Top-side cooled dual half-bridge design delivers improved cooling, higher energy efficiency, greater design flexibility, and enhanced overall performance.

Key Specifications

Complete manufacturer part numberIMSQ120R234M2HHXUMA1
ManufacturerInfineon Technologies
DescriptionCoolSiC™ MOSFET discrete 1200 V, 234 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package, optimized for industrial applications such as EV charging, string inverters, and power supplies. The Q-DPAK enables lower system cost through simplified assembly and excellent thermal performance. Top-side cooled dual half-bridge design delivers improved cooling, higher energy efficiency, greater design flexibility, and enhanced overall performance.
Package / casePG-HDSOP-16-221
Product categoryMOSFETs
Pins16
Pin Count (manufacturer family record)16 Pins
Qgd (manufacturer family record)2.2 nC
RDS (on) [@ Tj = 25°C] (manufacturer family record)234 mΩ
Operating Temperature minimum (manufacturer family record)-55 °C
Operating Temperature maximum (manufacturer family record)175 °C
RthJA maximum (manufacturer family record)62 K/W
RthJC maximum (manufacturer family record)1.88 K/W
Voltage Class maximum (manufacturer family record)1200 V
In stock1,101 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IMSQ120R234M2HHXUMA1
Manufacturer: Infineon Technologies
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