IMW65R010M2HXKSA1
The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Key Specifications
| Complete manufacturer part number | IMW65R010M2HXKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ MOSFET 650 V, 10 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. |
| Package / case | PG-TO247-3-40 |
| Product category | MOSFETs |
| Pins | 3 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 10 mΩ |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| RDS (on) maximum [@ Tj = 25°C] (manufacturer family record) | 13 mΩ |
| RthJC maximum (manufacturer family record) | 0.87 K/W |
| VDS maximum (manufacturer family record) | 650 V |
| Voltage Class maximum (manufacturer family record) | 650 V |
| In stock | 10,957 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.