IMW65R075M2HXKSA1
The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
Key Specifications
| Complete manufacturer part number | IMW65R075M2HXKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. |
| Package / case | PG-TO247-3-40 |
| Product category | MOSFETs |
| Pins | 3 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 75 mΩ |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| RDS (on) maximum [@ Tj = 25°C] (manufacturer family record) | 95 mΩ |
| RthJC maximum (manufacturer family record) | 1.35 K/W |
| VDS maximum (manufacturer family record) | 650 V |
| Voltage Class maximum (manufacturer family record) | 650 V |
| In stock | 6,433 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.