IPB014N08NM6ATMA1
Manufacturer package reference image
OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.
Key Specifications
| Complete manufacturer part number | IPB014N08NM6ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density. |
| Package / case | PG-TO263-3-2 |
| Product category | MOSFETs |
| Pins | 3 |
| QG [typ @10V] (manufacturer family record) | 151 nC |
| VGS(th) (manufacturer family record) | 3 V |
| VGS(th) minimum (manufacturer family record) | 2.4 V |
| RDS (on) maximum [@10V] (manufacturer family record) | 1.4 mΩ |
| VDS maximum (manufacturer family record) | 80 V |
| VGS(th) maximum (manufacturer family record) | 3.5 V |
| In stock | 7,128 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-TO263-3-2. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.