IPB175N20NM6ATMA1
Manufacturer package reference image
IPB175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide unparallel efficiency and power density compared to legacy IR MOSFET™ products.
Key Specifications
| Complete manufacturer part number | IPB175N20NM6ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | IPB175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide unparallel efficiency and power density compared to legacy IR MOSFET™ products. |
| Package / case | PG-TO263-3-2 |
| Product category | MOSFETs |
| Pins | 3 |
| QG [typ @10V] (manufacturer family record) | 31 nC |
| QG (manufacturer family record) | 31 nC |
| VGS(th) (manufacturer family record) | 3.7 V |
| VGS(th) minimum (manufacturer family record) | 3 V |
| RDS (on) maximum [@10V] (manufacturer family record) | 17.5 mΩ |
| VDS maximum (manufacturer family record) | 200 V |
| VGS(th) maximum (manufacturer family record) | 4.5 V |
| In stock | 4,941 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-TO263-3-2. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.