IPT65R080CFD7XTMA1
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R080CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Key Specifications
| Complete manufacturer part number | IPT65R080CFD7XTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R080CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage. |
| Package / case | PG-HSOF-8-2 |
| Product category | Semiconductor |
| Pins | 8 |
| ID,nom (manufacturer family record) | 34 A |
| QG (manufacturer family record) | 50 nC |
| RDS (on) maximum [@ Tj = 25°C] (manufacturer family record) | 80 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.