IQD009N06NM5SCATMA1
The power MOSFET IQD009N06NM5SC comes with a low R<sub>DS(on)</sub> of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
Key Specifications
| Complete manufacturer part number | IQD009N06NM5SCATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The power MOSFET IQD009N06NM5SC comes with a low R<sub>DS(on)</sub> of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications. |
| Package / case | PG-WHSON-8-2 |
| Product category | MOSFETs |
| Pins | 8 |
| QG [typ @10V] (manufacturer family record) | 120 nC |
| VGS(th) (manufacturer family record) | 2.8 V |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| VGS(th) minimum (manufacturer family record) | 2.1 V |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| RDS (on) maximum [@10V] (manufacturer family record) | 0.9 mΩ |
| VDS maximum (manufacturer family record) | 60 V |
| VGS(th) maximum (manufacturer family record) | 3.3 V |
| Voltage Class maximum (manufacturer family record) | 60 V |
| In stock | 3,194 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.