IQD016N08NM5CGATMA1

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The power MOSFET IQD016N08NM5CG 80 V comes in a PQFN 5x6 mm<sup>2</sup> Source-Down package. The part offers a very low R<sub>DS(on)</sub> of 1.6 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .

Key Specifications

Complete manufacturer part numberIQD016N08NM5CGATMA1
ManufacturerInfineon Technologies
DescriptionThe power MOSFET IQD016N08NM5CG 80 V comes in a PQFN 5x6 mm<sup>2</sup> Source-Down package. The part offers a very low R<sub>DS(on)</sub> of 1.6 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .
Package / casePG-TTFN-9-2
Product categoryMOSFETs
Pins9
QG [typ @10V] (manufacturer family record)106 nC
VGS(th) (manufacturer family record)3 V
Operating Temperature minimum (manufacturer family record)-55 °C
VGS(th) minimum (manufacturer family record)2.2 V
Operating Temperature maximum (manufacturer family record)175 °C
RDS (on) maximum [@10V] (manufacturer family record)1.57 mΩ
VDS maximum (manufacturer family record)80 V
VGS(th) maximum (manufacturer family record)3.8 V
Voltage Class maximum (manufacturer family record)80 V
In stock1,073 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IQD016N08NM5CGATMA1
Manufacturer: Infineon Technologies
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