IQD020N10NM5CGATMA1

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The power MOSFET IQD020N10NM5CG 100 V normal-level comes in a PQFN 5x6 mm<sup>2</sup> Source-Down package. The part offers the industry’s lowest R<sub>DS(on)</sub> of 2.0 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .

Key Specifications

Complete manufacturer part numberIQD020N10NM5CGATMA1
ManufacturerInfineon Technologies
DescriptionThe power MOSFET IQD020N10NM5CG 100 V normal-level comes in a PQFN 5x6 mm<sup>2</sup> Source-Down package. The part offers the industry’s lowest R<sub>DS(on)</sub> of 2.0 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .
Package / casePG-TTFN-9-2
Product categorySemiconductor
QG [typ @10V] (manufacturer family record)107 nC
VGS(th) (manufacturer family record)3 V
VGS(th) minimum (manufacturer family record)2.2 V
RDS (on) maximum [@10V] (manufacturer family record)2.05 mΩ
VDS maximum (manufacturer family record)100 V
VGS(th) maximum (manufacturer family record)3.8 V
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Lead timeTo be confirmed

Technical documentation and image source

The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IQD020N10NM5CGATMA1
Manufacturer: Infineon Technologies
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