IQDH29NE2LM5CGATMA1
The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm<sup>2</sup> Source-Down package. The part offers the industry’s lowest R<sub>DS(on)</sub> of 0.29 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.
Key Specifications
| Complete manufacturer part number | IQDH29NE2LM5CGATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm<sup>2</sup> Source-Down package. The part offers the industry’s lowest R<sub>DS(on)</sub> of 0.29 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms. |
| Package / case | PG-TTFN-9-2 |
| Product category | Semiconductor |
| QG [typ @4.5V] (manufacturer family record) | 88 nC |
| QG [typ @10V] (manufacturer family record) | 191 nC |
| VGS(th) (manufacturer family record) | 1.6 V |
| VGS(th) minimum (manufacturer family record) | 1.2 V |
| RDS (on) maximum [@10V] (manufacturer family record) | 0.29 mΩ |
| VDS maximum (manufacturer family record) | 25 V |
| VGS(th) maximum (manufacturer family record) | 2 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.