IQDH35N03LM5SCATMA1

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The power MOSFET IQDH35N03LM5SC comes with a  low R<sub>DS(on)</sub> of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.

Key Specifications

Complete manufacturer part numberIQDH35N03LM5SCATMA1
ManufacturerInfineon Technologies
DescriptionThe power MOSFET IQDH35N03LM5SC comes with a  low R<sub>DS(on)</sub> of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
Package / casePG-WHSON-8-2
Product categoryMOSFETs
Pins8
QG [typ @4.5V] (manufacturer family record)91 nC
QG [typ @10V] (manufacturer family record)197 nC
VGS(th) (manufacturer family record)1.6 V
Operating Temperature minimum (manufacturer family record)-55 °C
VGS(th) minimum (manufacturer family record)1.2 V
Operating Temperature maximum (manufacturer family record)150 °C
RDS (on) maximum [@10V] (manufacturer family record)0.35 mΩ
RDS (on) maximum [@4.5V] (manufacturer family record)0.4 mΩ
VDS maximum (manufacturer family record)30 V
VGS(th) maximum (manufacturer family record)2 V
Voltage Class maximum (manufacturer family record)30 V
In stock2,166 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: IQDH35N03LM5SCATMA1
Manufacturer: Infineon Technologies
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