IQE004NE1LM7ATMA1
IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in R<sub>DS</sub>(on) and FOMQ<sub>g</sub> by ~30%, and ~40% for FOMQ<sub>OSS</sub> when compared to OptiMOS™ 5 25 V. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications.
Key Specifications
| Complete manufacturer part number | IQE004NE1LM7ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in R<sub>DS</sub>(on) and FOMQ<sub>g</sub> by ~30%, and ~40% for FOMQ<sub>OSS</sub> when compared to OptiMOS™ 5 25 V. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications. |
| Package / case | PG-TSON-8-5 |
| Product category | MOSFETs |
| Pins | 8 |
| QG [typ @4.5V] (manufacturer family record) | 29 nC |
| VGS(th) (manufacturer family record) | 1.6 V |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| VGS(th) minimum (manufacturer family record) | 1.2 V |
| Operating Temperature maximum (manufacturer family record) | 150 °C |
| RDS (on) maximum [@4.5V] (manufacturer family record) | 0.57 mΩ |
| VDS maximum (manufacturer family record) | 15 V |
| VGS(th) maximum (manufacturer family record) | 2 V |
| Voltage Class maximum (manufacturer family record) | 15 V |
| In stock | 5,353 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.