IQE018N06NM6CGSCATMA1
Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower R<sub>DS(on)</sub> and ~25% improved FOMQg x R<sub>DS(on)</sub> in SuperSO8. These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
Key Specifications
| Complete manufacturer part number | IQE018N06NM6CGSCATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower R<sub>DS(on)</sub> and ~25% improved FOMQg x R<sub>DS(on)</sub> in SuperSO8. These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications. |
| Package / case | PG-WHTFN-9-1 |
| Product category | MOSFETs |
| Polarity (manufacturer record) | N |
| QG [typ @10V] (manufacturer family record) | 43 nC |
| VGS(th) (manufacturer family record) | 2.7 V |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| VGS(th) minimum (manufacturer family record) | 2.1 V |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| RDS (on) maximum [@10V] (manufacturer family record) | 1.8 mΩ |
| VDS maximum (manufacturer family record) | 60 V |
| VGS(th) maximum (manufacturer family record) | 3.3 V |
| Voltage Class maximum (manufacturer family record) | 60 V |
| In stock | 1,314 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.