IRFG5110EWSA1
The IRFG5110 is a 100V dual 2N & 2P-channel high reliability MOSFET in a R4 HEXFET technology MO-036AB package. It features low on-state resistance, high transconductance, and is ideal for high-reliability applications such as power supplies, motor controls, and audio amplifiers. The isolated package improves thermal efficiency and reduces drain.
Key Specifications
| Complete manufacturer part number | IRFG5110EWSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The IRFG5110 is a 100V dual 2N & 2P-channel high reliability MOSFET in a R4 HEXFET technology MO-036AB package. It features low on-state resistance, high transconductance, and is ideal for high-reliability applications such as power supplies, motor controls, and audio amplifiers. The isolated package improves thermal efficiency and reduces drain. |
| Package / case | C-DIP-14-952 |
| Product category | Semiconductor |
| VBRDSS minimum (manufacturer family record) | 100 V |
| ID maximum [N-CH @100°C] (manufacturer family record) | 0.6 A |
| ID maximum [N-CH @25°C] (manufacturer family record) | 1 A |
| ID maximum [P-CH @100°C] (manufacturer family record) | -0.6 A |
| ID maximum [P-CH @25°C] (manufacturer family record) | -1 A |
| RDS (on) maximum [N-CH @25°C] (manufacturer family record) | 700 mΩ |
| RDS (on) maximum [P-CH @25°C] (manufacturer family record) | 700 mΩ |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.