ISC025N08NM6ATMA1

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OptiMOS™ 6 power MOSFET in 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower R<sub>DS(on)</sub> and ~40% improved FOM<sub>Qg</sub> x R<sub>DS(on)</sub> in D<sup>2</sup>PAK 7Pin. The performance improvements lead to higher system efficiency and power density.

Key Specifications

Complete manufacturer part numberISC025N08NM6ATMA1
ManufacturerInfineon Technologies
DescriptionOptiMOS™ 6 power MOSFET in 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower R<sub>DS(on)</sub> and ~40% improved FOM<sub>Qg</sub> x R<sub>DS(on)</sub> in D<sup>2</sup>PAK 7Pin. The performance improvements lead to higher system efficiency and power density.
Package / casePG-TDSON-8-36
Product categoryMOSFETs
Pins8
QG [typ @10V] (manufacturer family record)46 nC
VGS(th) (manufacturer family record)3 V
Operating Temperature minimum (manufacturer family record)-55 °C
VGS(th) minimum (manufacturer family record)2.4 V
Operating Temperature maximum (manufacturer family record)175 °C
RDS (on) maximum [@10V] (manufacturer family record)2.5 mΩ
VDS maximum (manufacturer family record)80 V
VGS(th) maximum (manufacturer family record)3.5 V
Voltage Class maximum (manufacturer family record)80 V
In stock3,736 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: ISC025N08NM6ATMA1
Manufacturer: Infineon Technologies
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