ISC028N03LF2SATMA1
Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class R<sub>DS(on)</sub> of 2.8 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC028N03LF2S achieves up to 40% R<sub>DS(on)</sub> improvement while having up to 60% FOM enhancement and excellent robustness.
Key Specifications
| Complete manufacturer part number | ISC028N03LF2SATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class R<sub>DS(on)</sub> of 2.8 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC028N03LF2S achieves up to 40% R<sub>DS(on)</sub> improvement while having up to 60% FOM enhancement and excellent robustness. |
| Package / case | PG-TDSON-8-49 |
| Product category | Semiconductor |
| QG [typ @4.5V] (manufacturer family record) | 13 nC |
| QG [typ @10V] (manufacturer family record) | 27 nC |
| VGS(th) (manufacturer family record) | 1.85 V |
| VGS(th) minimum (manufacturer family record) | 1.35 V |
| RDS (on) maximum [@10V] (manufacturer family record) | 2.8 mΩ |
| VDS maximum (manufacturer family record) | 30 V |
| VGS(th) maximum (manufacturer family record) | 2.35 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.