ISK018NE1LM7ATSA1
ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low R<sub>DS</sub>(on) of 2.15 mOhm while offering a pulsed current capability of more than 500 A, with a typical thermal resistance junction to case-bottom (R<sub>thJC</sub>) of 1.6 K/W. The small 4 mm<sup>2</sup> footprint package enables significant space saving with PCB layout flexibility while having form factor improvement.
Key Specifications
| Complete manufacturer part number | ISK018NE1LM7ATSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low R<sub>DS</sub>(on) of 2.15 mOhm while offering a pulsed current capability of more than 500 A, with a typical thermal resistance junction to case-bottom (R<sub>thJC</sub>) of 1.6 K/W. The small 4 mm<sup>2</sup> footprint package enables significant space saving with PCB layout flexibility while having form factor improvement. |
| Package / case | PG-VSON-6-1 |
| Product category | Semiconductor |
| QG [typ @4.5V] (manufacturer family record) | 7.5 nC |
| VGS(th) (manufacturer family record) | 1.6 V |
| VGS(th) minimum (manufacturer family record) | 1.2 V |
| RDS (on) maximum [@4.5V] (manufacturer family record) | 2.15 mΩ |
| VDS maximum (manufacturer family record) | 15 V |
| VGS(th) maximum (manufacturer family record) | 2 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.