ISP16DP10LMAXTSA1

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ISP16DP10LMA features a low R<sub>DS(on)</sub> of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive applications. The main advantage of a P-channel device is the reduction of design complexity and simple interface.In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications.

Key Specifications

Complete manufacturer part numberISP16DP10LMAXTSA1
ManufacturerInfineon Technologies
DescriptionISP16DP10LMA features a low R<sub>DS(on)</sub> of 0.067 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive applications. The main advantage of a P-channel device is the reduction of design complexity and simple interface.In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications.
Package / casePG-SOT223-4-21
Product categoryMOSFETs
Pins4
QG [typ @4.5V] (manufacturer family record)-21 nC
QG [typ @10V] (manufacturer family record)-41 nC
Operating Temperature minimum (manufacturer family record)-55 °C
VGS(th) minimum (manufacturer family record)-1 V
Operating Temperature maximum (manufacturer family record)150 °C
RDS (on) maximum [@10V] (manufacturer family record)167 mΩ
RDS (on) maximum [@4.5V] (manufacturer family record)190 mΩ
VDS maximum (manufacturer family record)-100 V
VGS(th) maximum (manufacturer family record)-2 V
Voltage Class maximum (manufacturer family record)-100 V
In stock2,089 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: ISP16DP10LMAXTSA1
Manufacturer: Infineon Technologies
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