ISP670P06NMAXTSA1
ISP670P06NMA features a low R<sub>DS(on)</sub> of 0.167 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive application. The main advantage of a P-channel device is the reduction of design complexity.In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications.
Key Specifications
| Complete manufacturer part number | ISP670P06NMAXTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | ISP670P06NMA features a low R<sub>DS(on)</sub> of 0.167 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive application. The main advantage of a P-channel device is the reduction of design complexity.In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications. |
| Package / case | PG-SOT223-4-21 |
| Product category | MOSFETs |
| Pins | 4 |
| QG [typ @10V] (manufacturer family record) | -36 nC |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| VGS(th) minimum (manufacturer family record) | -2.1 V |
| Operating Temperature maximum (manufacturer family record) | 150 °C |
| RDS (on) maximum [@10V] (manufacturer family record) | 67 mΩ |
| VDS maximum (manufacturer family record) | -60 V |
| VGS(th) maximum (manufacturer family record) | -4 V |
| Voltage Class maximum (manufacturer family record) | -60 V |
| In stock | 3,628 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.