S25FS512SAGNFI011

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The S25FS512SAGNFI011 is a 512 Mb (64 MB) SPI NOR Flash memory based on 65-nm MIRRORBIT™ technology with Eclipse architecture, supporting 1.7 V to 2.0 V operation. It delivers up to 80 MB/s read rates (DDR Quad I/O), flexible 256/512-byte page programming, and hybrid or uniform sector erase options. Qualified to AEC-Q100 Grade 1 for automotive (-40°C to +125°C), it features advanced security, ECC, and low standby current for embedded and automotive use.

Key Specifications

Complete manufacturer part numberS25FS512SAGNFI011
ManufacturerInfineon Technologies
DescriptionThe S25FS512SAGNFI011 is a 512 Mb (64 MB) SPI NOR Flash memory based on 65-nm MIRRORBIT™ technology with Eclipse architecture, supporting 1.7 V to 2.0 V operation. It delivers up to 80 MB/s read rates (DDR Quad I/O), flexible 256/512-byte page programming, and hybrid or uniform sector erase options. Qualified to AEC-Q100 Grade 1 for automotive (-40°C to +125°C), it features advanced security, ECC, and low standby current for embedded and automotive use.
Package / casePG-WSON-8-805
Product categoryMemory ICs
Pins8
Operating Temperature minimum (manufacturer family record)-40 °C
Operating Temperature maximum (manufacturer family record)85 °C
In stock10,989 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: S25FS512SAGNFI011
Manufacturer: Infineon Technologies
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