S26KS128SDGBHM030
The S26KS128SDGBHM030 is a 128 Mb automotive-grade HYPERFLASH™ memory built on 65 nm MIRRORBIT™ technology. Supporting HYPERBUS™ at 1.8 V and 3.0 V, it delivers up to 166 MHz clock rate (333 MBps) with DDR center-aligned read strobe. Operating from -40°C to +125°C (AEC-Q100 Grade 1), it offers 100,000 program/erase cycles, 20-year retention, ECC and CRC for data integrity, and advanced sector protection. Typical standby current is 25 µA.
Key Specifications
| Complete manufacturer part number | S26KS128SDGBHM030 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S26KS128SDGBHM030 is a 128 Mb automotive-grade HYPERFLASH™ memory built on 65 nm MIRRORBIT™ technology. Supporting HYPERBUS™ at 1.8 V and 3.0 V, it delivers up to 166 MHz clock rate (333 MBps) with DDR center-aligned read strobe. Operating from -40°C to +125°C (AEC-Q100 Grade 1), it offers 100,000 program/erase cycles, 20-year retention, ECC and CRC for data integrity, and advanced sector protection. Typical standby current is 25 µA. |
| Package / case | PG-BGA-24-803 |
| Product category | Memory ICs |
| Pins | 24 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 125 °C |
| In stock | 3,608 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.