S26KS512SDPBHA020
The S26KS512SDPBHA020 is a 512 Mb (64 MB) HYPERFLASH™ NOR memory device with a high-speed HYPERBUS™ DDR interface, supporting up to 333 MBps read throughput at 1.8 V and 166 MHz. Built on 65 nm MIRRORBIT™ technology, it features 256 KB uniform sectors, 4 KB parameter sectors, ECC, CRC, and advanced sector protection. AEC-Q100 Grade 2 qualified (–40°C to +105°C), it targets automotive and industrial code and data storage applications requiring fast, reliable access.
Key Specifications
| Complete manufacturer part number | S26KS512SDPBHA020 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S26KS512SDPBHA020 is a 512 Mb (64 MB) HYPERFLASH™ NOR memory device with a high-speed HYPERBUS™ DDR interface, supporting up to 333 MBps read throughput at 1.8 V and 166 MHz. Built on 65 nm MIRRORBIT™ technology, it features 256 KB uniform sectors, 4 KB parameter sectors, ECC, CRC, and advanced sector protection. AEC-Q100 Grade 2 qualified (–40°C to +105°C), it targets automotive and industrial code and data storage applications requiring fast, reliable access. |
| Package / case | PG-BGA-24-803 |
| Product category | Memory ICs |
| Pins | 24 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 1,291 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.