S29GL01GS10DHA023
The S29GL01GS10DHA023 is a 1 Gb parallel NOR flash memory based on Infineon's 65 nm MIRRORBIT™ Eclipse technology, featuring a 3.0 V core, versatile I/O (1.65 V to VCC), and 16-bit data bus. It delivers 100 ns random access and 15 ns page access, supports a 512-byte write buffer, internal ECC, and advanced sector protection. With 100,000 program/erase cycles and AEC-Q100 automotive qualification, it is ideal for high-reliability embedded and automotive applications.
Key Specifications
| Complete manufacturer part number | S29GL01GS10DHA023 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The S29GL01GS10DHA023 is a 1 Gb parallel NOR flash memory based on Infineon's 65 nm MIRRORBIT™ Eclipse technology, featuring a 3.0 V core, versatile I/O (1.65 V to VCC), and 16-bit data bus. It delivers 100 ns random access and 15 ns page access, supports a 512-byte write buffer, internal ECC, and advanced sector protection. With 100,000 program/erase cycles and AEC-Q100 automotive qualification, it is ideal for high-reliability embedded and automotive applications. |
| Package / case | PG-LFBGA-64-801 |
| Product category | Component specifications |
| Pins | 64 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 12,556 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.